SJ-IGBT

Super

超致半导体

600V Trench and Super Junction IGBT

Super-Semi Trench and Super Junction IGBTs, designed according to the superjunction (SJ) principle.\nThe SJ-IGBT series provides low switching losses, high energy efficiency and high avalanche ruggedness for motion control, solar application and welding machine, etc. • BVCES=600V for improved reliability\n\n• Superjunction Technology offering :\n➢High speed switching\n➢High ruggedness, temperature stable\n➢Short circuit withstand time – 10uS\n➢Low VCE(sat): Typ. 2.1V at Ic=30A\n➢Easy parallel switching capability due to positive temperature coefficient in VCE(sa;

Super

超致半导体

EL Series Power MOSFET

文件：119.64 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司

E Series Power MOSFET

文件：199.83 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世威世科技公司

E Series Power MOSFET

文件：184.07 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司