高压DMOS产品

SI

星宸科技

iscN-Channel MOSFET Transistor

·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.202Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators

文件：320.54 Kbytes 页数：2 Pages

ISC

无锡固电

E Series Power MOSFET

文件：162.58 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世威世科技公司

iscN-Channel MOSFET Transistor

文件：323.33 Kbytes 页数：2 Pages

ISC

无锡固电