N-Channel 200 V (D-S) 175 °C MOSFET

FEATURES • TrenchFET® technology optimizes balance of RDS(on), Qg, Qsw, and Qoss • Tuned for the lowest RDS - Qoss FOM • Top side cooling feature provides additional venue for thermal transfer • 100 Rg and UIS tested • Material categorization: for definitions of compliance please see www.

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VISHAYVishay Siliconix

威世威世科技公司

N-Channel 200 V (D-S) 175 °C MOSFET

• TrenchFET® technology optimizes balance of RDS(on), Qg, Qsw, and Qoss\n• Top side cooling feature provides additional venue for thermal transfer;

Vishay

威世

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipati

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VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件：282.85 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface mount

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It pro

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VISHAYVishay Siliconix

威世威世科技公司