SID1132KQ

Up to 8 A Single Channel IGBT/MOSFET Gate Driver Automotive Applications Providing Reinforced Galvanic Isolation

Applications •Electricvehiclepowertrain •Electricvehicleon-boardchargersandchargerstations •Highreliabilitydriversandinverters Description TheSID11x2KQisasinglechannelIGBTandMOSFETdriverinan eSOPpackage.ReinforcedgalvanicisolationisprovidedbyPower Integrat

SID1132KQ

汽车专用可提供加强绝缘的单通道IGBT/MOSFET门极驱动器;

SID11xxKQ是采用eSOP封装的单通道IGBT和MOSFET驱动器。该器件利用Power Integrations创新的固体绝缘FluxLink技术实现了加强绝缘。其8 A峰值输出驱动电流可直接驱动600 A（典型值）的IGBT和MOSFET，而无需使用外置推动级。对于超出SID11xxKQ的最大输出电流的门极驱动要求，可以在外部添加一个放大器（推动级）。稳定的门极正负电压由一个单绕组隔离电压源提供。\n\n 该器件还具有带高级软关断(ASSD)的短路保护(DESAT)、用于原方和副方的欠压保护(UVLO)以及带温度和过程补偿输出阻抗的轨到轨输出等更多功能，可确保产品即使在严苛的条件下也能安全工作。\n\n 控制器（PWM和故障）信号兼容5 V CMOS逻辑电平，使用外部分压电阻还可将逻辑电平调整到15 V。\n\n

SLD1132VS

635nmRedLaserDiode

Description TheSLD1132VSisaredlaserdiodedesignedforlaserpointers.Itswavelength(635nmtyp.)isshortenedby35nmandvisibilityisincreasedbyapproximately7times,comparedtotheconventionalvisiblelaserdiode(670nmtyp.). Features •Shortwavelength(635nmtyp.) •Smallpac

SMTC-1132

SolderingToolsandEquipmentforElectronicsAssembly

SMV1132A-LF

Voltage-ControlledOscillator

SMV1132A-LF

Voltage-ControlledOscillatorSurfaceMountModule

STB1132

PNPSiliconTransistor

Description •Mediumpoweramplifier Features •PC(Collectordissipation)=2W(Ceramicsubstateof40×40×0.8mmused) •Lowcollectorsaturationvoltage:VCE(sat)=-0.2V(Typ.) •ComplementarypairwithSTD1664

STB1132

PNPSiliconTransistor

Description •Mediumpoweramplifier Features •PC(Collectorpowerdissipation) =1W(Ceramicsubstateof250㎟×0.8tused) •Lowcollectorsaturationvoltage:VCE(sat)=-0.2V(Typ.) •ComplementarypairwithSTD1664

STB1132

PNPSiliconTransistor

TA1132A

SAWFilter881.5MHz