SIC830

80 A VRPower짰, Smart Power Stage With Current Sensing

SIC830AED-T1-GE3

包装：卷带（TR） 类别：集成电路（IC） 全半桥驱动器 描述：IC PWR STAGE 80 A CURRENT MONITO

SIC830ED-T1-GE3

Package：39-PowerVFQFN；包装：卷带（TR） 类别：集成电路（IC） 全半桥驱动器 描述：IC POWER STAGE 80A 5X6 MLP

SIE830DF

N-Channel30-V(D-S)MOSFET

FEATURES •ExtremelyLowQgdWFET®Technologyfor   LowSwitchingLosses •UltraLowThermalResistanceUsing   Top-ExposedPolarPAK®Packagefor   Double-SidedCooling •Leadframe-BasedNewEncapsulatedPackage   -DieNotExposed   -SameLayoutRegardlessofDieSize •LowQgd/Qgs

SIHF830

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

SIHF830A

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable  

SiHF830A

PowerMOSFET

SIHF830A

LowGateChargeQgResultsinSimpleDriveRequirement

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSu

SIHF830AL

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossspecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSupply(SMPS)

SIHF830AL

PowerMOSFET

FEATURES •LowgatechargeQgresultsinsimpledrive requirement •Improvedgate,avalancheanddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww.