SIC1181KQ中文资料POWERINT数据手册PDF规格书

Applications

• Electric vehicle BEV traction drives

• Hybrid electric vehicle PHEV traction drives

• Electric vehicle on-board and off-board chargers

描述 Description

The SIC1181KQ and SIC1182KQ are single channel gate drivers for

SiC MOSFETs. Reinforced galvanic isolation is provided by Power

Integrations’ revolutionary solid insulator FluxLink technology. Up to

±8 A peak output drive current enables the product to drive devices

with nominal currents of up to 600 / 800 A (typical).

Additional features such as undervoltage lock-out (UVLO) for

primary-side and secondary-side and rail-to-rail output with temperature

and process compensated output impedance guarantee safe

operation even in harsh conditions.

Furthermore, this gate driver IC comes along with short-circuit protection

(at and during turn-on phase) as well as overvoltage limitation by AAC

advanced active clamping (at turn-off phase) through a single sensing

pin. For SIC MOSFET with current-sense terminal, an adjustable

over-current detection can be realized.