SIB800EDK

N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode

SIB800EDK-T1-GE3

N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode

SIE800DF

N-Channel30-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •ExtremelyLowQgdforLowSwitchingLosses •TrenchFET®PowerMOSFET •UltraLowThermalResistanceUsingTopExposedPolarPAK®PackageforDouble-SidedCooling •Leadframe-BasedNewEncapsulatedPackage -DieNotEx

SIJ800DP

N-Channel40-V(D-S)MOSFET

SIJH800E

N-Channel80V(D-S)175째CMOSFET

FEATURES •TrenchFET®GenIVpowerMOSFET •Fullylead(Pb)-freedevice •OptimizedQg,Qgd,andQgd/Qgsratioreduces switchingrelatedpowerloss •50smallerfootprintthanD2PAK(TO-263) •100RgandUIStested •Materialcategorization:fordefinitionsofcompliance pleaseseewww.v

SIM800

SIM800SeriesATCommandManual

SIM800

SIM800SeriesATCommandManual

GeneralNotes SIMComoffersthisinformationasaservicetoitscustomers,tosupportapplicationand engineeringeffortsthatusetheproductsdesignedbySIMCom.Theinformationprovidedisbased uponrequirementsspecificallyprovidedtoSIMCombythecustomers.SIMComhasnot undertakena

SIM800C

HardwareDesignV1.02

SIM800C

Hardware_Design_V1.02

SIM800Cwillbepoweredoffinthefollowingsituations： Normalpoweroffprocedure:poweroffSIM800CbythePWRKEYpin. Normalpoweroffprocedure:poweroffSIM800CbyATcommand“AT+CPOWD=1”. Abnormalpoweroff:over-voltageorunder-voltageautomaticpoweroff. Abnormalpoweroff:

SIM800F

Dual-band850/900/1800/1900MHz