订购数量 | 价格 |
---|---|
1+ |
首页>SI9926CDY-T1-GE3>芯片详情
SI9926CDY-T1-GE3_VISHAY/威世科技_MOSFET 20V 8.0A 3.1W 18mohm @ 4.5V卓越微芯一部
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SI9926CDY-T1-GE3
- 功能描述:
MOSFET 20V 8.0A 3.1W 18mohm @ 4.5V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
相近型号
- SI9928DY-T1-E3
- SI9925DY-T1-GE3
- SI9933ADY
- SI9925DY-T1-E3
- SI9933ADY-T1
- SI9925DY-T1
- SI9933ADY-T1-E3
- SI9910DY-T1-E3
- SI9933ADY-T1-GE3
- SI9910DY
- SI9933BDY
- SI9804DY-T1-E3
- SI9933BDY-T1-E
- SI9803DY-T1-E3
- SI9933BDY-T1-E3
- SI9801DY-T1-E3
- SI9801DY
- SI9933BDY-T1-GE3
- SI9731DQ-T1
- SI9933CDY
- SI9712DY-T1-E3
- SI9933CDY-T1-E3
- SI9706DY-T1
- SI9933CDY-T1-GE3
- SI9621EC-B-ISR
- SI9933DY
- SI9529DY-T1-E3
- SI9933DY-T1
- SI9513-PC
- SI9933DY-T1-E3
- SI9513-JC
- SI9933DY-T1-GE3
- SI9436DY-T1-GE3
- SI9934BDY
- SI9436BDY
- SI9934BDY-T1-E3
- SI9435DY-T1-GE3
- SI9934DY
- SI9435DY-T1-E3
- SI9934DY-T1
- SI9435DY-T1
- SI9934DY-T1-E3
- SI9435DY
- SI9934DY-T1-GE3
- SI9435BDY-T1-GE3
- SI9936
- SI9435BDY-T1-E3IC
- SI9936BDY
- SI9435BDY-T1-E3
- SI9936BDY-T1-E3