DESCRIPTION

The Si9912 is a dual MOSFET high-speed driver with break-before-make. It is designed to operate in high frequency dc-dc switchmode power supplies. The high-side driver is bootstrapped to handle the high voltage slew rate associated with “floating” high-side gate drivers. Each driver is capable of switching a 3000-pF load with 60-ns propogation delay and 25-ns transition time. The Si9912 comes with an internal break-before-make feature to prevent shoot-through current in the external MOSFETs. A shutdown pin is used to enable the driver. When disabled, the quiescent current of the driver is less than 5
A.

FEATURES

• 4.5- to 5.5-V Operation

• Undervoltage Lockout

• 250-kHz to 1-MHz Switching Frequency

• Shutdown Quiescent Current <5
A

• One Input PWM Signal Generates Both Drive

• Bootstrapped High-Side Drive

• Operates from 4.5- to 30-V Supply

• TTL/CMOS Compatible Input Levels

• 1-A Peak Drive Current

• Break-Before-Make Circuit

APPLICATIONS

• Multiphase Desktop CPU Supplies

• Single-Supply Synchronous Buck Converters

• Mobile Computing CPU Core Power Converters

• Standard-Synchronous Converters

• High Frequency Switching Converters

SI9912DY-T1-E3属于集成电路（IC） > 栅极驱动器。威世科技制造生产的SI9912DY-T1-E3栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。