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SI8425DB-T1-E1_VISHAY/威世科技_MOSFET -20V 23mOhm@4.5V 9.3A P-Ch G-III粤骏腾二部
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产品属性
- 类型
描述
- 型号:
SI8425DB-T1-E1
- 功能描述:
MOSFET -20V 23mOhm@4.5V 9.3A P-Ch G-III
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
- 企业:
深圳市粤骏腾电子科技有限公司
- 商铺:
- 联系人:
蔡蔡
- 手机:
13530559292
- 询价:
- 电话:
0755-82532966/82530833/13530559292
- 地址:
深圳市福田区华强北路赛格广场6609室
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