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SI8424DB-T1-E1_VISHAY/威世科技_MOSFET 8.0V 12.2A 6.25W 31mohm @ 4.5V胜彬电子
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产品属性
- 类型
描述
- 型号:
SI8424DB-T1-E1
- 功能描述:
MOSFET 8.0V 12.2A 6.25W 31mohm @ 4.5V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
- 企业:
深圳市胜彬电子有限公司
- 商铺:
- 联系人:
段小姐
- 手机:
18902465585
- 询价:
- 电话:
0755-83135478
- 传真:
0755-82780849
- 地址:
深圳市龙华区观湖街道鹭湖社区观盛五路英飞拓大楼1314
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