SI8273DBD-IS1

4 Amp ISOdriver with High Transient (dV/dt) Immunity

KEYFEATURES •Single,dual,orhigh-side/low-sidedrivers •SinglePWMordualdigitalinputs •HighdV/dtimmunity: •200kV/μsCMTI •400kV/μsLatch-up •Separatepull-up/downoutputsforslew ratecontrol •Widesupplyrange: •Inputsupply:2.5–5.5V •Driversupply:4.2–30V •Ve

Si8273DBD-IS1

Isolated Gate Drivers;

Si8273DBD-IS1 devices provide options for a VIA, VIB inputs and High Side / Low Side driver. The Si8273DBD-IS1, with its high performance noise immunity, eliminates the risk posed by faster switching speeds. The high noise transients generated by the faster switching does not affect signal integrity through the driver, thereby eliminating the risk of loss of modulation. The very high latch-up spec of 400 kV/µs makes Si8273DBD-IS1 devices extremely robust, preventing permanent latch-up damage, and has UVLO fault protection, a de-glitch circuit for filtering noisy inputs, and highly precise dead time (DT pin) programmability. With this feature, users can precisely control the “dead time” between the two drivers switching to optimize system efficiency and safety. The drivers operate with a wide range of 2.5 V - 5.5 V input VDD and a maximum drive supply voltage of 30 V. The isolation technology offers low EMI emissions, long lifetimes, fast and accurate timing specs and a wide temperature range of -40°C to +125°C. They are offered in a NB SOIC16 package.\n\n

Si8273DBD-IS1

Single PWM or dual digital inputs

SI8273DBD-IS1

4 Amp ISOdriver with High Transient (dV/dt) Immunity

SI8273GBD-IS1

SILICON LABS/芯科
SOIC-16

SILICON LABS/芯科