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Si823H3CB-IS1数据手册Skyworks中文资料规格书
Si823H3CB-IS1规格书详情
描述 Description
Our Si823H3CB-IS1 isolated gate drivers offer very high transient immunity of 125 kV/µs, low propagation delays of 30 ns max for better timing margins, a symmetric drive strength of 4.0 A sink and source with a drive boost circuit allowing faster FET turn-on and stable operation over a wide operating temperature range of -40 to 125 °C. It offers critical safety features such as dead time programmability, integrated deglitcher, driver side UVLO options and over-temperature protection and compact size benefits. Isolation ratings of 2.5 kVrms are available. Si823H3CB-IS1 isolators are offered in a High Side / Low Side configuration.
技术参数
- 制造商编号
：SI823H3CB-IS1
- 生产厂家
：Skyworks
- Temperature Range Min (°C)
：-40
- 10 kV Surge
：true
- Package Type
：NB SOIC16
- OPN
：Si823H3CB-IS1
- Peak Output Current (A)
：4.0
- Overlap Protection and Dead Time Control
：true
- Driver Supply (V)
：5.5
- UVLO Voltage (V)
：12
- Input Supply (V)
：5.5
- Package Size (mm)
：3.9x9.9
- Description
：2.5 kV High Side/Low Side Drivers
- AEC-Q100
：true
- Max Propagation Delay
：58
- Isolation Rating (kVrms)
：2.5
- Output Configuration
：High Side / Low Side
- Temperature Range Max (°C)
：125
