SI82396CB-IS1

4.0 A ISODrivers with 2.5 V VDDI and Safety Features

KEYFEATURES •Twoisolateddriversinonepackage •Upto5kVRMSisolation •Upto1500VDCpeakdriver-to-driver differentialvoltage •EnhancedoutputUVLOsafety •Statusfeedbacktocontroller •BothoutputsdrivelowonUVLO •ENpinforenhancedsafety •ExtendedVDDI:2.5V–5.5

SI82396CB-IS1

Isolated Gate Drivers;

Si82396CB-IS1 devices combine two isolated drivers with either an independent input control or a single input for high power applications and offer unique features, including an output UVLO fault detection, feedback, and automatic shutdown for both drivers, an EN (active high) instead of a DIS (active low) pin, a safe delayed start-up time of 1 ms, fail-safe drivers with default low in case of VDDI power-down, and highly precise dead time programmability. All drivers operate with a 2.5 V - 5.5 V input VDD and a maximum drive supply voltage of 24 V. The Si82396CB-IS1 isolators are ideal for driving power MOSFETs used in a wide variety of switched power and motor control applications. These drivers use our proprietary silicon isolation technology, supporting up to 2.5 kVRMS withstand voltages. This technology enables high noise immunity, low prop delays and skew, reduced variation with temperature and age, and tight part-to-part matching.\n\n

Si82396CB-IS1

4.0 A ISODrivers with 2.5 V VDDI and Safety Features