| 订购数量 | 价格 |
|---|---|
| 1+ |
首页>SI7882DP-T1-E3>芯片详情
SI7882DP-T1-E3_VISHAY/威世_MOSFET 12V 22A 5.0W 5.5mohm @ 4.5V向鸿伟业电子
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SI7882DP-T1-E3
- 功能描述:
MOSFET 12V 22A 5.0W 5.5mohm @ 4.5V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
相近型号
- SI7884BDP
- SI7880DY-T1-E3
- SI7884BDP1-E3
- SI7884BDPT1E3
- SI7880DP-T1-GE3-VB
- SI7884BDP-T1-E3
- SI7880DP-T1-GE3
- SI7880DP-T1-G
- SI7884BDPT1GE3
- SI7884BDP-T1-GE3
- SI7880DP-T1-E3
- SI7880DP-T1
- SI7880DP
- SI7880A-T1D-E3
- SI7884BDP-TI-E3
- SI7884DP
- SI7880ADP-T1-GE3
- SI7884DP1-E3
- SI7880ADPT1GE3
- SI7884DP-T1
- SI7884DP-T1-E3
- SI7880ADP-T1-E3IC
- SI7884DP-T1-E3-T1
- SI7880ADP-T1-E3
- SI7884DP-T1-GE3
- SI7880ADPT1E3
- SI7884DP-T1-GE3-VB
- SI7880ADP-T1
- SI7880ADP1-E3
- SI7880ADP
- SI7872DP-TI-GE3
- SI7886
- SI7872DP-T1-T3
- SI7886A
- SI7886ADP
- SI7872DP-T1-GE3
- SI7886ADP-T1
- SI7872DPT1GE3
- SI7886ADP-T1-E
- SI7886ADPT1E3
- SI7872DP-T1-E3
- SI7886ADP-T1-E3
- SI7872DPT1E3
- SI7872DP-T1
- SI7886ADPT1GE3
- SI7872DP
- SI7886ADP-T1-GE3
- SI7872
- SI786LRG-T1
- SI7886DP



