| 订购数量 | 价格 |
|---|---|
| 1+ |
首页>SI7738DP-T1-E3>详情
SI7738DP-T1-E3_VISHAY/威世_MOSFET 150V 30A 96W 38mohm @ 10V威雅利发展
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SI7738DP-T1-E3
- 功能描述:
MOSFET 150V 30A 96W 38mohm @ 10V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
相近型号
- SI7738DP-TI-GE3
- SI7742DP
- SI7726DN-T1-GE3CT
- SI7742DP1-E3
- SI7726DN-T1-GE3
- SI7742DP-T1-E3
- SI7726DNT1GE3
- SI7742DPT1GE3
- SI7742DP-T1-GE3
- SI7726DN-T1-E3
- SI7748DP
- SI7726DN
- SI7748DP-T1-E3
- SI7720DN-T1-GE3CT
- SI7720DN-T1-GE3
- SI7748DPT1GE3
- SI7720DNT1GE3
- SI7748DP-T1-GE3
- SI7720DN-T1-E3
- SI7720DN
- SI7718DN-T1-GE3CT
- SI7748DP-TI-GE3
- SI7718DN-T1-GE3
- SI7758DP
- SI7718DNT1GE3
- SI7758DP-T1-E3
- SI7718DN-T1-E3
- SI7758DPT1GE3
- SI7718DN
- SI7758DP-T1-GE3
- SI7716DN-T1-GE3
- SI7772DP
- SI7716DN1-E3
- SI7772DP1-E3
- SI7716AFET
- SI7772DP-T1-E3
- SI7716ADN-TI-GE3
- SI7772DPT1GE3
- SI7716ADN-T1-GR3
- SI7772DP-T1-GE3
- SI7772DP-TI-GE3
- SI7774DP-T1-E3
- SI7716ADN-T1-GE3IC
- SI7774DPT1GE3
- SI7716ADN-T1-GE3FET
- SI7774DP-T1-GE3
- SI7716ADN-T1-GE3CT
- SI7716ADN-T1-GE3
- SI7784ADP
- SI7716ADNT1GE3



