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首页>SI7450DP-T1-E3>芯片详情
SI7450DP-T1-E3_TI/德州仪器_MOSFET 200V 5.3A 5.2W金启宁科技
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SI7450DP-T1-E3
- 功能描述:
MOSFET 200V 5.3A 5.2W
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
- 企业:
深圳市金启宁科技有限公司
- 商铺:
- 联系人:
曾小姐
- 手机:
15820796658/18680327092
- 询价:
- 电话:
0755-29059095/82577629/82786758
- 传真:
0755-82786758
- 地址:
深圳市福田区华强北华联发综合楼810/香港九龙观塘成业街7号宁晋中心B室
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