| 订购数量 | 价格 |
|---|---|
| 1+ |
首页>SI4386DY-T1>详情
SI4386DY-T1_SIGMASTAR/星宸科技_MOSFET 30V 16A 3.1W 7.0mohm @ 10V一线半导体3部
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SI4386DY-T1
- 功能描述:
MOSFET 30V 16A 3.1W 7.0mohm @ 10V
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
相近型号
- SI4386DY-T1-GE3
- SI4384DYT1GE3
- SI4384DY-T1-E3
- SI4386DY-TI
- SI4384DYT1E3
- SI4384DY-T1
- SI4388DY
- SI4384DY1-E3
- SI4388DYT1E3
- SI4384DY
- SI4388DY-T1-E3
- SI4384BDY-T1-GE3
- SI4384BDY-T1-G
- SI4388DYT1GE3
- SI4384BDY-T1-E3
- SI4388DY-T1-GE3
- SI4382DY-TI-E3
- SI43-8R2
- SI4382DY-T1-GE3
- SI43-8R2L
- SI4382DY-T1-E3
- SI4390
- SI4382DY-T1
- SI4390DY
- SI4382DY
- SI4390DY1-E3
- SI43-820M
- SI4390DY-T1
- SI43-820
- SI4390DYT1E3
- SI4378DY-TI-E3
- SI4390DY-T1-E3
- SI4378DY-T1-GE3
- SI4378DYT1GE3
- SI4390DYT1GE3
- SI4378DY-T1-E3
- SI4390DY-T1-GE3
- SI4378DYT1E3
- SI4390DY-TI-E3
- SI4378DY-T1
- SI4378DY-E3
- SI4392
- SI4378DY1-E3
- SI4392ADY
- SI4378DY
- SI4392ADY-T1
- SI4376DY-T1-GE3
- SI4392ADY-T1-E
- SI4392ADY-T1-E3
- SI4376DY-T1-E3



