| 订购数量 | 价格 |
|---|---|
| 1+ |
SI4166DY-T1-GE3_VISHAY/威世_MOSFET 30V 30.5A 6.5W华来深电子
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SI4166DY-T1-GE3
- 功能描述:
MOSFET 30V 30.5A 6.5W
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
相近型号
- SI4168DY-T1-E3
- SI4164DY-T1-GE3
- SI4164DYT1GE3
- SI4168DYT1GE3
- SI4164DY-T1-E3-VB
- SI4168DY-T1-GE3
- SI4164DY-T1-E3
- SI4168DY-T1-GE3-HXY
- SI4164DY1-E3
- SI4164DY
- SI4164D
- SI4170DY-T1-E3
- SI4170DYT1GE3
- SI4170DY-T1-GE3
- SI4172
- SI4172DY
- SI4172DY1-E3
- SI4172DY-GE3
- SI4162DY-T1-GE3IC
- SI4162DY-T1-GE3
- SI4172DY-T1
- SI4162DYT1GE3
- SI4172DY-T1-E3
- SI4162DY-T1-GE
- SI4162DY-T1-E3
- SI4172DY-T1-G3
- SI4162DY1-GE3
- SI4172DYT1GE3
- SI4162DY
- SI4172DY-T1-GE3
- SI4172DY-T1-GE3MOS()
- SI4160DY-TI-GE3
- SI4174DY
- SI4174DY1-E3
- SI4160DY-T1-GE3FET
- SI4174DY1-GE3
- SI4160DY-T1-GE3
- SI4174DY-T1
- SI4160DYT1GE3
- SI4174DY-T1-E3
- SI4160DY-T1-EG3
- SI4174DY-T1-GE1
- SI4160DY-T1-E3
- SI4174DYT1GE3
- SI4160DY-T1
- SI4174DY-T1-GE3
- SI4160DY
- SI4160
- SI-415-C8012
- SI-415-C8002



