| 订购数量 | 价格 |
|---|---|
| 1+ |
SI1401EDH-T1-GE3_VISHAY/威世_MOSFET -12V 34mOhm@4.5V 4A P-Ch G-III得捷芯城科技
- 详细信息
- 规格书下载
产品属性
- 类型
描述
- 型号:
SI1401EDH-T1-GE3
- 功能描述:
MOSFET -12V 34mOhm@4.5V 4A P-Ch G-III
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商
相近型号
- SI1401EDH
- SI1402DH-T1-GE3
- SI1403BDL
- SI1400DL-T1-GE3
- SI1403BDL1-E3
- SI1400DLT1GE3
- SI1403BDL-T1-BE3
- SI1403BDLT1E3
- SI1400DL-T1-E3
- SI1403BDL-T1-E3
- SI1400DLT1E3
- SI1403BDL-T1-E3MOS()
- SI1400DL-T1DO
- SI1400DL-T1/DO
- SI1403BDL-T1-GE3
- SI1400DL-T1
- SI1400DLT1
- SI1400DL1
- SI1403CDL
- SI1400DL
- SI1403CDL-T1-E3
- SI1400DC
- SI1403CDLT1GE3
- SI13811CNU
- SI1403CDL-T1-GE3
- SI13726CB
- SI13531ACNU
- SI1344
- SI1403DBL-T1-E3
- SI-1340H
- SI1403DH-T1-GE3
- SI1330EFDL-T1-E3
- SI1403DL
- SI1403DL1-E3
- SI1403DL-T1
- SI1330EDL-T1-GE3-VB
- SI1403DL-T1-E3
- SI1403DL-T1-GE3
- SI1330EDL-T1-GE3
- SI1330EDLT1GE3
- SI1404BDH-T1-E
- SI1404BDHT1E3
- SI1404BDH-T1-E3
- SI1330EDL-T1-E3
- SI1404BDHT1GE3
- SI1330EDLT1E3
- SI1404BDH-T1-GE3
- SI1330EDL-T1-BE3
- SI1404DH
- SI1330EDL



