首页 >SGW10N60RUFTM>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-CHANNELPOWERMOSFET | SISEMICShenzhen SI Semiconductors Co.,LTD. 深爱半导体深圳深爱半导体股份有限公司 | SISEMIC | ||
Reducedswitchingandconductionlosses | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
FastS-IGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ·75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses ·Shortcircuitwithstandtime–10ms ·Designedfor: -Motorcontrols -Inverter ·NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebe | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
HighSpeed2-Technology •Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode ●75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ●Shortcircuitwithstandtime–10μs ●Designedfor: -Motorcontrols -Inverter ●NPT-Technologyfor600Va | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
FastS-IGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ·75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses ·Shortcircuitwithstandtime–10ms ·Designedfor: -Motorcontrols -Inverter ·NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebe | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmitterControlledDiode ●75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses ●Shortcircuitwithstandtime–10μs ●Designedfor: -Motorcontrols -Inverter ●NPT-Technologyfor600Va | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
FastS-IGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode ·75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses ·Shortcircuitwithstandtime–10ms ·Designedfor: -Motorcontrols -Inverter ·NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highruggedness,temperaturestablebe | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
详细参数
- 型号：
SGW10N60RUFTM
- 功能描述：
IGBT 晶体管 600V/10A
- RoHS：
否
- 制造商：
Fairchild Semiconductor
- 配置：
集电极—发射极最大电压
- VCEO：
650 V
- 集电极—射极饱和电压：
2.3 V
- 栅极/发射极最大电压：
20 V 在25
- C的连续集电极电流：
150 A
- 栅极—射极漏泄电流：
400 nA
- 功率耗散：
187 W
- 封装/箱体：
TO-247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
N/A |
23+ |
NA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
SNEC |
24+ |
4000 |
询价 | ||||
NA |
2020+ |
SMD |
2000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
ST/意法 |
23+ |
D2PAKTO- |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
FAIRCHILD/仙童 |
22+ |
SOT-263 |
20000 |
保证原装正品,假一陪十 |
询价 | ||
FAIRCHILD/仙童 |
TO-263 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO-263 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
FAIRCHILD/仙童 |
22+ |
TO-263 |
25000 |
只做原装进口现货,专注配单 |
询价 |
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