IGBT

SGT40T120FD3P7 绝缘栅双极型晶体管采用第四代槽栅场截止（Trench Field Stop）工艺制作，具有低的导通损耗和关断损耗，正温度系数易于并联应用等特点。该产品可应用于电焊机，UPS，SMPS以及PFC等领域。 • 40A，1200V，VCE(sat)(典型值)=2.3V@IC=40A\n• 超快开关速度\n• 高击穿电压;

Silan

士兰微

绝缘栅双极型晶体管

SGT40T120SDB4P7绝缘栅双极型晶体管采用士兰微电子第四代槽栅场截止（Trench Field Stop IV）工艺制作，具有低的导通损耗和开关损耗，正温度系数易于并联应用等特点。该产品可应用于变频器，UPS，SMPS等领域。\n\n • 40A，1200V，VCE(sat)(典型值)=1.8V@IC=40A\n• 超低导通损耗\n• 快开关速度\n• 高击穿电压\n• TJmax=175°C;

Silan

士兰微

IGBT

Silan

士兰微

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, Power TO247-3L 1200 V, 1.45 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topology in automotive applications. Features

文件：231.22 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.42 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers the optimum performance with low on state voltage and minimal switching losses for both hard and soft switching topologies in automotive applications. Features

文件：471.73 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SCR, TO247-3L 1200 V, 1.67 V, 40 A

Description Using the novel field stop 7th generation IGBT technology and the Gen7 Diode in TO247 3−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. Features  Extremel

文件：628.68 Kbytes 页数：9 Pages

ONSEMI

安森美半导体