N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

• HIGH SPEED SWITCHING APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: •GENERAL PURPOSE N-channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switch- ing times make this POWER MOS transistor ideal for

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STMICROELECTRONICS

意法半导体

Wireless Module Solutions

[SIMCom] Wireless Module Solutions

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ETCList of Unclassifed Manufacturers

未分类制造商

High-Efficiency Power Solution Using DC/DC Converter With DVFS

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TI

德州仪器

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances resu

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POLYFET