SGSD310资料datasheet下载库存现货-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
SGSD310	文件：293.36 Kbytes Page：6 Pages	HIGH VOLTAGE, HIGH POWER, FAST SWITCHING 文件：293.36 Kbytes 页数：6 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
SGSD310	文件：300 bytes Page：1 Pages	HIGH VOLTAGE, HIGH POWER, FAST SWITCHING	ST 意法半导体	ST
SH310BF	文件：444.56 Kbytes Page：4 Pages	Schottky Barrier Rectifiers 文件：444.56 Kbytes 页数：4 Pages	BILIN 银河微电	BILIN
SIFU310	文件：3.93309 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：3.93309 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
SIHFD310	文件：1.25725 Mbytes Page：8 Pages	Power MOSFET VDS (V) 400 RDS(on) (Ω) VGS = 10 V 3.6 Qg (Max.) (nC) 17 Qgs (nC) 3.4 Qgd (nC) 8.5 Configuration Single DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness 文件：1.25725 Mbytes 页数：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY

更多SGSD310供应商更新时间2026-4-17 14:02:00