100V N-Channel MOSFET

The SG-MOSFET uses trench MOSFET technology that is uniquely optimized to provide the most efficient highfrequency switching performance.\nBoth conduction and switching power losses are minimized due to anextremely low combination of RDS(ON), Ciss and Coss.\nThis device is ideal for boost converters • VDS : 100V\n• ID (at Vgs=10V) : 12A\n• RDS(on)\n (at Vgs=10V) : <10mΩ\n (at Vgs=4.5V) : <12mΩ\n\n• Excellent Avalanche Performance;

Super

超致半导体

Primary-side-control PWM Controller

文件：497.07 Kbytes 页数：14 Pages

Fairchild

仙童半导体

Primary-side-control PWM Controller

文件：497.07 Kbytes 页数：14 Pages

Fairchild

仙童半导体

DPDT Non-Latching DC-6 GHz, RF Relay

DESCRIPTION The ultraminiature SGRF100 and SGRF103 relays are designed to provide a practical surface-mount solution with improved RF signal repeatability over the frequency range. SGRF100 and SGRF103 relays feature a unique ground shield that isolates and shields each lead to ensure excelle

文件：456.23 Kbytes 页数：4 Pages

TELEDYNE

华特力科