IGBT CO-PAK (High Speed Switching Low Saturation Voltage High Input Impedance)

FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 2.7 V (at IC=60A) * High Input Impedance APPLICATIONS * Home Appliance - Induction Heater - IH JAR - Micro Wave Oven

文件：241.9 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

General Description

General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for induction h

文件：363.41 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

IGBT CO-PAK (High Speed Switching Low Saturation Voltage High Input Impedance)

ONSEMI

安森美半导体

Package：TO-264-3，TO-264AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 900V 60A 180W TO264

ONSEMI

安森美半导体

Package：TO-264-3，TO-264AA；包装：管件 类别：分立半导体产品 晶体管 - UGBT、MOSFET - 单 描述：IGBT 900V 60A 180W TO264

ONSEMI

安森美半导体