SGD02N120数据手册分立半导体产品的晶体管-UGBT、MOSFET-单规格书PDF

描述 Description

Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies.

特性 Features

·30% lower E off compared to previous generation
·Short circuit withstand time – 10μs
·Designed for operation above 30kHz
·High ruggedness, temperature stable behaviour
·Pb-free lead plating; RoHS compliant
·Qualified according to JEDEC for target applications

简介

SGD02N120属于分立半导体产品的晶体管-UGBT、MOSFET-单。由制造生产的SGD02N120晶体管 - UGBT、MOSFET - 单单 IGBT（绝缘栅双极晶体管）是一种具有三个端子的多层半导体器件，能够处理大电流，具有快速开关特性。其特征参数包括类型、集射极击穿电压、集电极电流、脉冲集电极电流、VCE(ON)、开关能量和栅极电荷。