High-Reliability Transistors

Key Features: • Seven npn Darlington pairs • -55°C to 125°C ambient operating temperature range • Collector currents to 600mA • Output voltages from 50V to 95V • Internal clamping diodes for inductive loads • DTL, TTL, PMOS, or CMOS compatible inputs • Hermetic ceramic package The SG2000 series inte

Microchip

微芯科技

GaAs N-channel Dual Gate MES FET

Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. Features • Low voltage operation • Low noise: NF = 1.5dB (typ.) at 900MHz •

文件：51.59 Kbytes 页数：5 Pages

SonySony Corporation

索尼

GaAs N-channel Dual Gate MES FET

Description The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. Features • Ultra small package • Low voltage operation • Low noise: NF = 1.

文件：57.15 Kbytes 页数：5 Pages

SonySony Corporation

索尼

GaAs N-channel Dual Gate MES FET?

Description The SGM2014M is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. Features • Low voltage operation • Low noise: NF = 1.5dB (typ.) at 900MHz •

文件：107.43 Kbytes 页数：4 Pages

SonySony Corporation

索尼