High-Reliability Transistors

Key Features: • Seven npn Darlington pairs • -55°C to 125°C ambient operating temperature range • Collector currents to 600mA • Output voltages from 50V to 95V • Internal clamping diodes for inductive loads • DTL, TTL, PMOS, or CMOS compatible inputs • Hermetic ceramic package The SG2000 series inte

Microchip

微芯科技

GaAs N-channel Dual-Gate MES FET

Description The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including cellular/cordless phone. Features • Ultra-small package • Low voltage operation • Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.

文件：54.89 Kbytes 页数：5 Pages

SonySony Corporation

索尼

300mA, Low Power, Low Dropout, 3 -Terminal, Linear Regulators

GENERAL DESCRIPTION The SGM2013 low-power, low-dropout, CMOS linear voltage regulators operate from a 2.5V to 5.5V input and deliver up to 300mA. They are perfect choice for low voltage, low power applications. An ultra low ground current (200µA at 300mA output) makes them attractive for batter

文件：519.049 Kbytes 页数：10 Pages

SGMICRO

圣邦股份

GaAs N-channel Dual-Gate MES FET

Description The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including cellular/cordless phone. Features • Ultra-small package • Low voltage operation • Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.

文件：54.89 Kbytes 页数：5 Pages

SonySony Corporation

索尼