N-Channel Power MOSFET

文件：811.53 Kbytes 页数：6 Pages

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N-Channel Power MOSFET

文件：811.53 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET

文件：371.82 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET

文件：371.82 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

N-Channel Power MOSFET

文件：371.82 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

单 N 沟道，功率 MOSFET，250V，3A，2.4Ω

This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize input capacitance and gate charge.\nThis devices is suitable for applications with low gate charge driving requirements. • High Speed Switching\n• Reduces dynamic power losses\n• Low Gate Charge\n• Ease of drive, faster turn-on\n• ESD Diode - Protected Gate\n• ESD resistance;

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N-Channel Power MOSFET 40V, 21A, 28m, Single TP/TP-FA

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MOSFET N-CH 40V 21A TP-FA

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