General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=45mΩ(typ.) • Input Capacitance Ciss=590pF(typ.) • 4.5V drive • Halogen free compliance

文件：82.24 Kbytes 页数：4 Pages

SANYO

三洋

P-Channel Power MOSFET 40V, 19A, 59m, Single TP/TP-FA

Features • ON-resistance RDS(on)1=45mΩ(typ.) • Input Capacitance Ciss=590pF(typ.) • 4.5V drive • Halogen free compliance • Protection diode in

文件：417.62 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

General-Purpose Switching Device Applications

ONSEMI

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isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -19A@ TC=25℃ · Drain Source Voltage -VDSS= -40V(Min) · Static Drain-Source On-Resistance -RDS(on) = 59mΩ(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：275.85 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel Power MOSFET 40V, 19A, 59m, Single TP/TP-FA

Features • ON-resistance RDS(on)1=45mΩ(typ.) • Input Capacitance Ciss=590pF(typ.) • 4.5V drive • Halogen free compliance • Protection diode in

文件：417.62 Kbytes 页数：9 Pages

ONSEMI

安森美半导体

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -19A@ TC=25℃ · Drain Source Voltage -VDSS= -40V(Min) · Static Drain-Source On-Resistance -RDS(on) = 59mΩ(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：286.51 Kbytes 页数：2 Pages

ISC

无锡固电

P-Channel Power MOSFET 40V, 19A, 59m, Single TP/TP-FA

Features • ON-resistance RDS(on)1=45mΩ(typ.) • Input Capacitance Ciss=590pF(typ.) • 4.5V drive • Halogen free compliance • Protection diode in

文件：417.62 Kbytes 页数：9 Pages

ONSEMI

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P-Channel MOSFET uses advanced trench technology

文件：1.01605 Mbytes 页数：4 Pages

DOINGTER

杜因特

P-Channel 60 V (D-S) MOSFET

文件：971.54 Kbytes 页数：7 Pages

VBSEMI

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P-Channel Power MOSFET 40V, 19A, 59m, Single TP/TP-FA

ONSEMI

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