Power MOSFET

Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

文件：357.46 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Multi-Conductor - DataBus짰 ISA/SP-50 FOUNDATION Fieldbus or PROFIBUS Cable

文件：102.86 Kbytes 页数：3 Pages

BELDEN

百通

2 -20 GHz Wideband AGC Amplifier

Key Features and Performance • 0.5 um MESFET Technology • 9 dB Nominal Gain • 3.5 dB NF Typical Midband • 17.5 dBm Nominal Pout @ P1dB • Bias 5-8V @ 60 mA • Dimensions 3.378mm x 2.032mm Primary Applications • Wideband Gain Block Amplifier • Wideband Low Noise Amplifier

文件：124.12 Kbytes 页数：4 Pages

TRIQUINT

2 -20 GHz Wideband AGC Amplifier

Key Features and Performance • 0.5 um MESFET Technology • 9 dB Nominal Gain • 3.5 dB NF Typical Midband • 17.5 dBm Nominal Pout @ P1dB • Bias 5-8V @ 60 mA • Dimensions 3.378mm x 2.032mm Primary Applications • Wideband Gain Block Amplifier • Wideband Low Noise Amplifier

文件：124.12 Kbytes 页数：4 Pages

TRIQUINT