isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -10A@ TC=25℃ · Drain Source Voltage -VDSS= -40V(Min) · Static Drain-Source On-Resistance -RDS(on) = 112mΩ(Max)@VGS= -4.5V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：286.65 Kbytes 页数：2 Pages

ISC

无锡固电

Single P-Channel Power MOSFET

Features • Low On-Resistance • High Speed Switching • Low Gate Charge • Low Gate Drive Voltage • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

文件：353.02 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Single P-Channel Power MOSFET

Features • Low On-Resistance • High Speed Switching • Low Gate Charge • Low Gate Drive Voltage • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

文件：353.02 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Single P-Channel Power MOSFET

Features • Low On-Resistance • High Speed Switching • Low Gate Charge • Low Gate Drive Voltage • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

文件：353.02 Kbytes 页数：6 Pages

ONSEMI

安森美半导体