Advanced Power MOSFET

FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν 175°C Operating Temperature ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ν Low RDS(ON) : 0.106 Ω (Typ.)

文件：284.26 Kbytes 页数：7 Pages

FAIRCHILD

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isc P-Channel MOSFET Transistor

文件：272.12 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

ONSEMI

安森美半导体

Advanced Power MOSFET

FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ 175oC Operating Temperature ❐ Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ❐ Low RDS(ON) : 0.106 Ω (Typ.)

文件：288.18 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体

isc P-Channel MOSFET Transistor

文件：362.92 Kbytes 页数：2 Pages

ISC

无锡固电

Advanced Power MOSFET

文件：288.32 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体