SFL830SG

Marking：SFL830SG；Package：SOP8；Boost-PFC / PSR CombustIon Control Unit

SFP830

N-ChannelMOSFET

SFP830D

N-ChannelMOSFET

SI830X

Si830xSmartSwitchDataSheet

Description TheSi830xprovidesfourhigh-sideorlow-side switcheswithlowRON.Theseswitchesareidealfor drivingresistiveandinductiveloadslikesolenoids, relays,andlampscommonlyfoundinindustrialcontrol systemslikeProgrammableLogicControllers(PLC). Theyareeasilyinter

SIC830

80AVRPower짰,SmartPowerStageWithCurrentSensing

SIE830DF

N-Channel30-V(D-S)MOSFET

FEATURES •ExtremelyLowQgdWFET®Technologyfor   LowSwitchingLosses •UltraLowThermalResistanceUsing   Top-ExposedPolarPAK®Packagefor   Double-SidedCooling •Leadframe-BasedNewEncapsulatedPackage   -DieNotExposed   -SameLayoutRegardlessofDieSize •LowQgd/Qgs

SIHF830

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio

SIHF830A

PowerMOSFET

FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable  

SiHF830A

PowerMOSFET

SIHF830A

LowGateChargeQgResultsinSimpleDriveRequirement

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •EffectiveCossSpecified •Lead(Pb)-freeAvailable APPLICATIONS •SwitchModePowerSu