慣-棺-款-Strahlungsdetektoren 慣-棺-款-Radiation Detectors

Features Substrate: 4600±1400 Ωcm Chip thickness: 381±15µm Topside: Aluminium contact 1.4µm Aluminium total cover 0.1µm Backside: 0.4µm Au/As ●Low dark current ●Low capacitance ●High breakdown voltag

文件：102.87 Kbytes 页数：2 Pages

SIEMENS

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Surface Mount Schottky Rectifier

文件：240.16 Kbytes 页数：5 Pages

Good-Ark

固锝电子

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipa

文件：135.35 Kbytes 页数：8 Pages

VishayVishay Siliconix

威世

Power MOSFET

文件：282 Kbytes 页数：9 Pages

VishayVishay Siliconix

威世