High Power Infrared Emitter

Features: • High Power Infrared LED • Double Stack emitter • Short switching times • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications • Infrared Illumination for came

文件：462.23 Kbytes 页数：13 Pages

OSRAM

艾迈斯欧司朗

High Power Infrared Emitter

Features: • High Power Infrared LED • Double Stack emitter • Short switching times • The product qualification test plan is based on the guidelines of AEC-Q101-REV-C, Stress Test Qualification for Automotive Grade Discrete Semiconductors. Applications • Infrared Illumination for came

文件：462.23 Kbytes 页数：13 Pages

OSRAM

艾迈斯欧司朗

Voltage-Controlled Oscillator Surface Mount Module

文件：77.41 Kbytes 页数：2 Pages

ZCOMM

NPN Silicon Transistor

Features • Low saturation voltage: VCE(sat)=0.15V Typ. @ IC=1A, IB=50mA • Large collector current capacity: IC=2A • Small and compact SMD type package • Complementary pair with STA3250F Applications • Power amplifier application • High current switching application

文件：293.64 Kbytes 页数：4 Pages

AUK

NPN Silicon Transistor

Features • Low saturation voltage: VCE(sat)=0.15V Typ. @ IC=1A, IB=50mA • Large collector current capacity: IC=2A • Small and compact SMD type package • Complementary pair with STA3250F Applications • Power amplifier application • High current switching application

文件：377.13 Kbytes 页数：6 Pages

KODENSHI

可天士