Germanium-PIN-Fotodiode

Features ● Especially suitable for applications from 600 nm to 1800 nm ● Short switching time (typ. 9 ns) ● Hermetically sealed metal package (similiar to TO-18) Applications ● For control and drive circuits ● Spectrophotometers ● IR laser detector systems ● IR distance measuring equipment

文件：136.05 Kbytes 页数：4 Pages

SIEMENS

西门子

Germanium-PIN-Fotodiode

Infineon

英飞凌

Index-Guided High Power AlGaAs Laser Diode

Description The SLD231VL is a high-power, index-guided AlGaAs laser diode. Features • Low current consumption • Small astigmatism • Small package (φ5.6mm) Applications Pickup for optical discs

文件：70.46 Kbytes 页数：3 Pages

SONYSony Corporation

索尼

10 TO 250 MHz CASCADABLE AMPLIFIER

Description The A231 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for accurate performance and high reliability. Features • LOW NOISE FIGURE: 1.7 dB (TYP.) • HIGH GAIN: 26.0 dB (TYP.) • HIGH EFFICIENCY: 16 mA at +5 Vdc • MEDIUM OUTPUT LEVEL: +14

文件：109.49 Kbytes 页数：1 Pages

MACOM

Cascadable Amplifier 10 to 250 MHz

文件：378.7 Kbytes 页数：2 Pages

MACOM