SFH1617A中文资料威世科技数据手册PDF规格书

DESCRIPTION

The 110 °C rated SFH1617A (DIP) feature a high current

transfer ratio, low coupling capacitance and high isolation

voltage. These couplers have a GaAs infrared diode emitter,

which is optically coupled to a silicon planar phototransistor

detector, and is incorporated in a plastic DIP-4 package.

The coupling devices are designed for signal transmission

between two electrically separated circuits.

The couplers are end-stackable with 2.54 mm spacing.

Creepage and clearance distances of > 8.0 mm are

achieved with option 6. This version complies with

IEC 60950 (DIN VDE 0805) for reinforced insulation up to an

operation voltage of 400 VRMS or DC. Specifications subject

to change.

FEATURES

• Operating temperature from - 55 °C to + 110 °C

• Good CTR linearity depending on forward

current

• Isolation test voltage, 5000 VRMS

• High collector emitter voltage, VCEO = 70 V

• Low saturation voltage

• Fast switching times

• Low CTR degradation

• Temperature stable

• Low coupling capacitance

• End stackable, 0.100 (2.54 mm) spacing

• High common mode interference immunity

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912