APM2307AC-TR

P-ChannelEnhancementModeMOSFET

Features •-30V/-3A,RDS(ON)=100mΩ(typ.)@VGS=-10V RDS(ON)=140mΩ(typ.)@VGS=-4.5V •SuperHighDenseCellDesignforExtremely LowRDS(ON) •ReliableandRugged •SOT-23Package Applications •PowerManagementinNotebookComputer,PortableEquipmen

ASI2307

NPNSILICONRFPOWERTRANSISTOR

DESCRIPTION: TheASI2307isDesignedforGeneralPurposeClassCPowerAmplifierApplicationsupto3000MHz. FEATURES: •PG=9.5dBmin.at7W/2300MHz •HermeticMicrostripPackage •Omnigold™MetalizationSystem

AUIRFR2307Z

AdvancedProcessTechnology

AUIRFR2307Z

AdvancedProcessTechnology

AUIRFR2307Z

UltraLowOn-Resistance

AUIRFR2307Z

AdvancedProcessTechnology

AUIRFR2307Z

HEXFET짰PowerMOSFET

AUIRFR2307ZTR

HEXFET짰PowerMOSFET

AUIRFR2307ZTRL

HEXFET짰PowerMOSFET

AUIRFR2307ZTRR

HEXFET짰PowerMOSFET

BC2307

Plastic-EncapsulateMOSFETS

FEATURE TrenchFETPowerMOSFET APPLICATION LoadSwitchforPortableDevices

CDK2307

Dual,20/40/65/80MSPS,12/13-bitAnalog-to-DigitalConverters

CDK2307

Dual,20/40/65/80MSPS,12/13-bitAnalog-to-DigitalConverters

CEN2307A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-3.2A,RDS(ON)=78mW@VGS=-10V. RDS(ON)=120mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. Lead-freeplating;RoHScompliant.

CEN2307B

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-3.7A,RDS(ON)=60mW@VGS=-10V. RDS(ON)=82mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

CEN2307BB

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-3.4A,RDS(ON)=70mW@VGS=-10V. RDS(ON)=108mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23-Tpackage. RoHScompliant.

CES2307

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-3.2A,RDS(ON)=78mΩ@VGS=-10V. RDS(ON)=120mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■SOT-23package. ■Leadfreeproductisacquired.

CES2307

P-Channel30V(D-S)MOSFET

FEATURES •TrenchFET®PowerMOSFET •100RgTested APPLICATIONS •ForMobileComputing -LoadSwitch -NotebookAdaptorSwitch -DC/DCConverter

CES2307A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES -30V,-3.2A,RDS(ON)=78mW@VGS=-10V. RDS(ON)=120mW@VGS=-4.5V. HighdensecelldesignforextremelylowRDS(ON). Ruggedandreliable. SOT-23package. Lead-freeplating;RoHScompliant.

CES2307A

P-ChannelEnhancementModeFieldEffectTransistor

FEATURES ■-30V,-3.2A,RDS(ON)=78mΩ@VGS=-10V. RDS(ON)=120mΩ@VGS=-4.5V. ■HighdensecelldesignforextremelylowRDS(ON). ■Ruggedandreliable. ■SOT-23package. ■Lead-freeplating;RoHScompliant.