丝印：120N80B；Package：TO-263；N-MOSFET 80V, 120A, 5.5mΩ

Features Adanced trench process technology Fully characterized Avalance voltage and current Good stablity and uniformity with hige EAS Fast Switching High Ruggedness Application Power switching application UPS (Uninterruptible Power Supplies) DC/DC converter General purpose ap

文件：1.70308 Mbytes 页数：6 Pages

SCILICON

赛力康电气

N-MOSFET 80V, 120A, 5.5mΩ

Features Adanced trench process technology Fully characterized Avalance voltage and current Good stablity and uniformity with hige EAS Fast Switching High Ruggedness Application Power switching application UPS (Uninterruptible Power Supplies) DC/DC converter General purpose ap

文件：1.70308 Mbytes 页数：6 Pages

SCILICON

赛力康电气

Trench FS technology offering

Features and Benefits: ◼ Trench FS technology offering ◼ High speed switching ◼ Low gate charge and VCE(sat) ◼ High ruggedness, temperature stable behavior ◼ Maximum junction temperature 175°C Applications: ◼ Solar inverters ◼ Uninterruptible power supplies ◼ Motor drives ◼ Air condit

文件：634.97 Kbytes 页数：6 Pages

SILIKRON

新硅能微电子

N-MOSFET 80V, 120A, 5.5mΩ

Features Adanced trench process technology Fully characterized Avalance voltage and current Good stablity and uniformity with hige EAS Fast Switching High Ruggedness Application Power switching application UPS (Uninterruptible Power Supplies) DC/DC converter General purpose ap

文件：1.70308 Mbytes 页数：6 Pages

SCILICON

赛力康电气

N-Channel Enhancement Mode MOSFET

文件：814.85 Kbytes 页数：4 Pages

DACO

罡境电子

N-Channel Enhancement Mode MOSFET

文件：240.76 Kbytes 页数：4 Pages

DACO

罡境电子