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SF30-06-LFR

3A SUPER FAST RECOVERY RECTIFIER

FEATURES ●LOWPOWERLOSS,HIGHEFFICIENCY ●LOWFORWARDVOLTAGE ●HIGHCURRENTCAPABILITY ●HIGHSPEEDSWITCHING ●HIGHSURGECAPABILITY ●HIGHRELIABILITY ●ROHS

FRONTIER

Frontier Electronics

30-06-A

HERMETICALLYSEALEDCRYSTALCANRELAY

OENINDIA

OEN India Limited

30-06-D

HERMETICALLYSEALEDCRYSTALCANRELAY

OENINDIA

OEN India Limited

30-06-E

HERMETICALLYSEALEDCRYSTALCANRELAY

OENINDIA

OEN India Limited

30-06-G

HERMETICALLYSEALEDCRYSTALCANRELAY

OENINDIA

OEN India Limited

30-06-L

HERMETICALLYSEALEDCRYSTALCANRELAY

OENINDIA

OEN India Limited

DSEC30-06

HiPerFREDTMEpitaxialDiodewithcommoncathodeandsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 Applications •Antiparalleldiodeforhighfrequencyswitchingdevices •

IXYS

IXYS Integrated Circuits Division

DSEC30-06A

HiPerFREDEpitaxialDiodewithcommoncathodeandsoftrecovery

Features ●Internationalstandardpackage ●Planarpassivatedchips ●Veryshortrecoverytime ●Extremelylowswitchinglosses ●LowIRM-values ●Softrecoverybehaviour ●EpoxymeetsUL94V-0 Applications ●Antiparalleldiodeforhighfrequencyswitchingdevices ●

IXYS

IXYS Integrated Circuits Division

DSEC30-06B

HiPerFREDTMEpitaxialDiodewithcommoncathodeandsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 Applications •Antiparalleldiodeforhighfrequencyswitchingdevices •

IXYS

IXYS Integrated Circuits Division

DSEC30-06B

HighPerformanceFastRecoveryDiodeLowLossandSoftRecoveryCommonCathode

HiPerFRED LowLossandSoftRecoveryHighPerformanceFastRecoveryDiodeCommonCathode Features/Advantages: ●Planarpassivatedchips ●Verylowleakagecurrent ●Veryshortrecoverytime ●Improvedthermalbehaviour ●VerylowIrm-values ●Verysoftrecoverybehaviour ●Avalanchevol

IXYS

IXYS Integrated Circuits Division

DSEI30-06A

FastRecoveryEpitaxialDiode(FRED)

Features ●InternationalstandardpackageJEDECTO-247AD ●Planarpassivatedchips ●Veryshortrecoverytime ●Extremelylowswitchinglosses ●LowIRM-values ●Softrecoverybehavior ●EpoxymeetsUL94V-0 ●VersionARisolatedandULregisteredE153432 Applications ●Antiparalleldio

IXYS

IXYS Integrated Circuits Division

DSEI30-06A

UltrafastRectifier

FEATURES ·Guardingforovervoltageprotection ·Dualrectifierconstruction,positivecentertap ·Metalofsiliconrectifier,majoritycarrierconduction ·Lowforwardvoltage,highefficiency ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Uni

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

DSEP30-06A

UltrafastRectifier

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

DSEP30-06A

HiPerFREDEpitaxialDiodewithsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 •Version..RisolatedandULregisteredE153432 Applications •Antiparalleldiodeforhighfr

IXYS

IXYS Integrated Circuits Division

DSEP30-06B

HiPerFREDEpitaxialDiodewithsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 •Version..RisolatedandULregisteredE153432 Applications •Antiparalleldiodeforhighfr

IXYS

IXYS Integrated Circuits Division

DSEP30-06BR

HiPerFREDEpitaxialDiodewithsoftrecovery

Features •Internationalstandardpackage •Planarpassivatedchips •Veryshortrecoverytime •Extremelylowswitchinglosses •LowIRM-values •Softrecoverybehaviour •EpoxymeetsUL94V-0 •Version..RisolatedandULregisteredE153432 Applications •Antiparalleldiodeforhighfr

IXYS

IXYS Integrated Circuits Division

DSEP30-06BR

UltrafastRecoveryDiode

FEATURES ·Ultrafastrecoverytime ·Lowforwardvoltage,highefficiency ·100avalanchetested APPLICATIONS ·Switchingpowersupply ·Powerswitchingcircuits

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

DSEP30-06CR

HiPerDynFREDTMEpitaxialDiodewithsoftrecovery(ElectricallyIsolatedBackSurface)

Features ●SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ●Lowcathodetotabcapacitance(

IXYS

IXYS Integrated Circuits Division

FE30-06

3AFASTEFFICIENTRECTIFIER

FRONTIER

Frontier Electronics

FE30-06

3AFASTEFFICIENTRECTIFIER

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

供应商型号品牌批号封装库存备注价格
TAIWAN
1305+
TO-3P
12000
公司特价原装现货
询价
台半
2022
TO-247
3268
原厂原装正品,价格超越代理
询价
SHS
2017+
原厂封装
25896
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票
询价
SHS品牌
2016+
TO-3P
6528
房间原装进口现货假一赔十
询价
TSC
23+
TO-3P
18000
询价
23+
N/A
90650
正品授权货源可靠
询价
台半
1746+
TO247
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
TAIWANSEMI
20+
TO-247
38900
原装优势主营型号-可开原型号增税票
询价
SHS
2022+
450
全新原装 货期两周
询价
SHS
23+
TO-3P
90000
只做原厂渠道价格优势可提供技术支持
询价
更多SF30-06-LFR供应商 更新时间2024-5-24 8:04:00