首页 >SF-2410F-T>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
TW2410andTW2412SingleBandGNSSAntennas | TALLYSMANTallysman Wireless Inc. Tallysman wireless inc. | TALLYSMAN | ||
HC49US22.1184MHzCrystalUnit Features: SurfaceMountSeamWeldPackage GoodFrequencyPerturbationandStabilityovertemperature DescriptionandApplications: HC49UScrystalunitforuseinwirelesstelecommunicationsdevices | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW | ||
N-Ch20VFastSwitchingMOSFETs | XINDEYI ShenZhen XinDeYi Electronics Co., Ltd. | XINDEYI | ||
NanoFuse | UNSEMIUN Semiconducctor INC 优恩半导体深圳市优恩半导体有限公司 | UNSEMI | ||
BIPOLARANALOGINTEGRATEDCIRCUIT FEATURES •Built-inthesaturationprotectioncircuitoftheoutputtransistor. •Thecapabilityofoutputcurrentis1A •Highaccuracyofoutputvoltage. |DVO|£±2(TJ=25°C) |DVO|£±3(0°C£TJ£125°C) •Lowdropoutvoltage. VDIF£1V(IO£1A,TJ£125°C) •Built-in | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
THREETERMINALLOWDROPOUTVOLTAGEREGULATOR SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
2and4-portRS-232USB-to-serialconverters | moxa 台湾摩莎 | moxa | ||
N-Ch20VFastSwitchingMOSFETs | UNITPOWER Unitpower Technology Limited | UNITPOWER | ||
N-Ch20VFastSwitchingMOSFETs | XINDEYI ShenZhen XinDeYi Electronics Co., Ltd. | XINDEYI | ||
P-Channel40V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •100RgTested •100UISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •POL | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安纳森半导体安纳森半导体香港有限公司 | ANASEM | ||
Lowvoltage,Lowpower,짹1HighdetectaccuracyCMOSVoltageDetector GENERALDESCRIPTIONS TheVDAseriesarevoltagedetectorswithlowvoltage,lowpower consumptionandhighaccuracy.Theaccuracyofthedetectionvoltage isdetectedbasedonavoltagereferenceofhighaccuracythatthe temperaturecoefficientiscontrolled.Thedetectionvoltageismadein | ANASEMAnaSem Hong Kong Limited. 安纳森半导体安纳森半导体香港有限公司 | ANASEM | ||
N-ChannelEnhancement-ModeVerticalDMOSFET | MicrochipMicrochip Technology Inc. 微芯科技微芯科技股份有限公司 | Microchip | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped | SUTEX Supertex, Inc | SUTEX | ||
N-ChannelEnhancement-ModeVerticalDMOSFET GeneralDescription Thisenhancement-mode(normally-off)transistorutilizesaverticalDMOSstructureandSupertex’swell-proven,silicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistorsandthehighinputimpedanceandpo | SUTEX Supertex, Inc | SUTEX | ||
SmallSignalMOSFET240V,200mA,N?묬hannelTO??2 SmallSignalMOSFET 240V,200mA,N−ChannelTO−92 Features •Pb−FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-Channel240-V(D-S)MOSFETs FEATURES ●LowOn-Resistance:3.5Ω ●SecondaryBreakdownFree:260V ●LowPower/VoltageDriven ●LowInputandOutputLeakage ●ExcellentThermalStability BENEFITS ●LowOffsetVoltage ●Full-VoltageOperation ●EasilyDrivenWithoutBuffer ●LowErrorVoltage ●NoHigh-Temperature“ | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
N-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped | SUTEX Supertex, Inc | SUTEX | ||
TMOSFETTransistor TMOSFETTransistor N-Channel-Enhancement | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
N-ChannelEnhancement-Mode Features ❏Freefromsecondarybreakdown ❏Lowpowerdriverequirement ❏Easeofparalleling ❏LowCISSandfastswitchingspeeds ❏Excellentthermalstability ❏IntegralSource-Draindiode ❏Highinputimpedanceandhighgain ❏ComplementaryN-andP-channeldevices Applications ❏Motor | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
23+ |
N/A |
97000 |
一级代理放心采购 |
询价 | |||
BOURNS |
2112+ |
SMD-2 |
115000 |
1000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
BOURNS |
23+ |
SMD |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
BOURNS |
21+ |
SMD |
4000 |
中国航天工业部战略合作伙伴行业领导者 |
询价 | ||
BOURNS |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
询价 | ||
BOURNS-伯恩斯 |
24+25+/26+27+ |
车规-保险丝 |
6358 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
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