8 W 808 nm 190 μm HIGH POWER SINGLE EMITTER LASER DIODE ON SUBMOUNT

FEATURES • 3.6 mm x 0.5 mm laser diode • 190 μm wide emitter • 8 W operating power (p-side down mounted) • Highly reliable single quantum well MBE structure • RoHS compliant APPLICATIONS • Solid-state laser pumping • Medical • Analytical • Printing

文件：474.56 Kbytes 页数：3 Pages

Coherent

高意

8 W 808 nm 190 μm HIGH POWER SINGLE EMITTER LASER DIODE ON C-MOUNT

FEATURES • 3.6 mm x 0.5 mm laser diode • 190 μm wide emitter • Cu C-Mount • 8 W operating power (p-side down mounted) • Highly reliable single quantum well MBE structure • RoHS compliant APPLICATIONS • Solid-state laser pumping • Medical • Analytical • Printing

文件：461.52 Kbytes 页数：3 Pages

Coherent

高意