Surface Mount ESD Capability Rectifiers

FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage current • ESD capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorizatio

文件：121.59 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface Mount ESD Capability Rectifiers

文件：101.29 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface Mount ESD Capability Rectifiers

FEATURES • Very low profile - typical height of 0.95 mm • Ideal for automated placement • Oxide planar chip junction • Low forward voltage drop, low leakage current • ESD capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Material categorizatio

文件：121.59 Kbytes 页数：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

Surface Mount ESD Capability Rectifiers

Very low profile - typical height of 0.95 mm\n Ideal for automated placement\n Oxide planar chip junction\n\n ;

Vishay

威世

Package：DO-221AC，SMA 扁平引线；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 100V 1.4A DO221AC

Vishay General Semiconductor - Diodes Division

Package：DO-221AC，SMA 扁平引线；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 100V 1.4A DO221AC

Vishay General Semiconductor - Diodes Division

Package：DO-221AC，SMA 扁平引线；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 100V 1.4A DO221AC

Vishay General Semiconductor - Diodes Division