SIHL620

PowerMOSFET

VDS(V)200 RDS(on)(Ω)VGS=5.0V0.80 Qg(Max.)(nC)16 Qgs(nC)2.7 Qgd(nC)9.6 ConfigurationSingle DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectivene

SiHL620

PowerMOSFET

SIHL620

PowerMOSFET

SiHL620S

SurfaceMount

SIHL620S

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •Logiclevelgatedrive •RDS(on)specifiedatVGS=4Vand5V •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note

SIHLI620G

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl

SIL620

SMTPowerInductor

Features ■RoHScompliant. ■Smallsize(5.6mm*5.6mm),Lowprofile(2.0mmmax.height)SMDtype. ■Magneticallyshielded,suitableforhighdensitymounting. ■HighenergystorageandlowDCR. ■Providedwithembossedcarriertapepacking. ■Idelforpowersourcecircuits,DC-DCconverter,D

SM620D

6.0AMPSurfaceMountSchottkyBarrierRectifiers

FEATURES •Lowforwardvoltagedrop •Highcurrentcapability •Highreliability •Highsurgecurrentcapability •Epitaxialconstruction

SMPB620

6AmpSchottkyBarrierRectifiers

SNRVUD620CT

Switch-modePowerRectifier

Thesestate-ofïthe-artdevicesaredesignedforuseinswitching powersupplies,invertersandasfreewheelingdiodes. Features •Ultrafast35NanosecondRecoveryTime •LowForwardVoltageDrop •LowLeakage •ESDRating: HumanBodyModel=3B(>8kV) MachineModel=C(>400