N-Ch: 4.5 A, 20 V, RDS(ON) 58 m
P-Ch: -4.5 A, -20 V, RDS(ON) 112 m
N & P-Channel Enhancement Mode MOSFET

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N-Ch: 4.5 A, 20 V, RDS(ON) 58 m\u0001 P-Ch: -4.5 A, -20 V, RDS(ON) 112 m\u0001 N & P-Channel Enhancement Mode MOSFET

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DESCRIPTION Low cost single chip rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in F126, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. FEATURES ■ SUITED FOR

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Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 radiant power improvement. Features

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VISHAYVishay Siliconix

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