首页 >SDM3205>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
CYLINDER kHzRANGECRYSTALUNITCYLINDER C-TYPE C-2-TYPE/C-4-TYPE •Frequencyrange:32.768kHz(20kHzto307.2kHz) •Thickness:φ1.2mmtoφ3.1mm •Overtoneorder:Fundamental/Overtone(192kHz,307.2kHz) •Applications:ClockandMicrocomputer | EPSONTOYOCOMEpson ToYoCom 爱普生爱普生拓优科梦 | EPSONTOYOCOM | ||
LowCapacitanceESDProtection Description TheSP3205provideslowcapacitance,unidirectionalandahigh levelofprotectionforelectronicequipmentthatmayexperience destructiveelectrostaticdischarges(ESD).Thetypicalcapacitance of0.3pFhelpsensureexcellentsignalintegrityonthemost challengingconsumerele | Littelfuselittelfuse 力特力特公司 | Littelfuse | ||
DynamicSpeaker | SOBERTON Soberton Inc. | SOBERTON | ||
SPDTSwitch FeaturesandApplications •Controlvoltage+3/0V. •CPpackage. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
110A,55VN-CHANNELMOSFET DESCRIPTION SVD3205T/F/SisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryflat low-voltagestructureVDMOStechnology.Theimprovedprocessand cellstructurehavebeenespeciallytailoredtominimizeon-state resistance,providesup | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
110A,55VN-CHANNELMOSFET DESCRIPTION SVD3205T/F/SisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryflat low-voltagestructureVDMOStechnology.Theimprovedprocessand cellstructurehavebeenespeciallytailoredtominimizeon-state resistance,providesup | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
110A,55VN-CHANNELMOSFET DESCRIPTION SVD3205T/F/SisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryflat low-voltagestructureVDMOStechnology.Theimprovedprocessand cellstructurehavebeenespeciallytailoredtominimizeon-state resistance,providesup | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
110A,55VN-CHANNELMOSFET DESCRIPTION SVD3205T/F/SisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilanproprietaryflat low-voltagestructureVDMOStechnology.Theimprovedprocessand cellstructurehavebeenespeciallytailoredtominimizeon-state resistance,providesup | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
SVI3205B/StereoPowerAmplifier | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO |
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