Super high dense cell design for low RDS(ON).

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SAMHOP

三合微科

N-Channel MOSFET uses advanced trench technology

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DOINGTER

杜因特

Super high dense cell design for low RDS(ON).

Samhop

三合微科

HIGH INJECTION N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (IGBT)

• HIGH INPUT IMPEDANCE • LOW ON-VOLTAGE • HIGH CURRENT CAPABILITY APPLICATIONS: • AUTOMOTIVE IGNITION • DRIVERS FOR SOLENOIDS AND RELAYS N-channel High Injection POWER MOS transis- tors (IGBT) which features a high impedance in- sulated gate input and a low on-resistance characteristi

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STMICROELECTRONICS

意法半导体