Discrete Diodes

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SIRECTIFIER

矽莱克电子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.06Ω(Max)@VGS= 10V DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

25A, 50V, 0.047 Ohm, N-Channel Power MOSFET

The RFP25N05 N-channel power MOSFET is manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It was designed for use in applications such as switching r

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INTERSIL

POWER MOS FIELD EFFECT TRANSISTORS

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ETCList of Unclassifed Manufacturers

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25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET

The RFP25N05L is an N-Channel logic level power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. The RFP25N05L was designed for use wit

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INTERSIL